Semiconductor device having a thin layer comprising germanium atoms as a matrix with a restricted range of hydrogen atom concentration
US4740829A · kind A · utility
75Cited by
5References
11Claims
0Family size
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Key dates
| Filing date | Dec 3, 1986 |
| Grant date | Apr 26, 1988 |
| Priority date | — |
| Expiry date | Dec 3, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/546
Abstract
A semiconductor device comprises a polycrystalline semiconductor thin film layer comprising germanium atoms as a matrix and containing 3 atomic % or less of hydrogen atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.