Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
US4741928A · kind A · utility
20Cited by
26References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 10, 1987 |
| Grant date | May 3, 1988 |
| Priority date | — |
| Expiry date | Apr 10, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and heating apparatus are provided for selectively depositing metal films, such as tungsten, on the metal and semi-conductor surfaces of a silicon wafer by chemical vapor deposition. The method and heating apparatus serve to isolate the depositing surface of silicon wafers from both infrared radiation and the nucleating species which are vaporized by hot surfaces within the reaction chamber by means of a barrier which reflects or absorbs infrared radiation and condenses vaporized nucleating species before a nucleate metal deposition sites on metal or semiconductor surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.