Structure containing hydrogenated amorphous silicon and process
US4741964A · kind A · utility
30Cited by
4References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 17, 1986 |
| Grant date | May 3, 1988 |
| Priority date | — |
| Expiry date | Jul 17, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure containing a substrate having a first hydrogenated amorphous silicon layer thereon and a second hydrogenated amorphous silicon layer located above the first layer. The two hydrogenated amorphous silicon layers differ from each other in the concentration of hydrogen contained therein. In addition, a process for fabricating such a structure is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.