Method of making graded junction containing amorphous semiconductor device
US4742012A · kind A · utility
13Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1986 |
| Grant date | May 3, 1988 |
| Priority date | — |
| Expiry date | Dec 30, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
This invention discloses a new semiconductor device having no step type p-i-n juctions but rather has a graded p-i-n juction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily with good reproducibility by a plasma discharge method, it is especially suited for use as a solar battery. An apparatus for the production of said semiconductor device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.