Method of diffusing zinc into III-V compound semiconductor material
US4742022A · kind A · utility
7Cited by
8References
8Claims
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Assignee
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Key dates
| Filing date | Oct 29, 1987 |
| Grant date | May 3, 1988 |
| Priority date | — |
| Expiry date | Oct 29, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2233
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of diffusing zinc into gallium arsenide and aluminum gallium arsenide. A wafer of gallium arsenide or aluminum gallium arsenide is placed in close proximity to a quantity of granular zinc gallium arsenide. The assemblage is heated in an open-tube furnace in the presence of flowing nitrogen to vaporize zinc whereby zinc diffuses into the gallium arsenide or aluminum gallium arsenide wafer without eroding the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.