Method of fabricating a charge coupled device
US4742027A · kind A · utility
15Cited by
12References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1987 |
| Grant date | May 3, 1988 |
| Priority date | — |
| Expiry date | Feb 17, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/15
Abstract
A gate structure for integrated circuits and more especially for photosensitive charge-transfer devices comprises elements of the gate-insulator-semiconductor type. The gate structure is constituted by a thin film-layer of transparent or semi-transparent conductive material covered with a layer of compatible insulating material having a refractive index higher than 1.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.