Patent · US Expired

Coupled laser diode arrangement

US4742525A · kind A · utility

8Cited by

1References

5Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Jochen Heinen · Haar, DE
Markus-Christian Amann · Munich, DE

Key dates

Filing date	Sep 6, 1985
Grant date	May 3, 1988
Priority date	—
Expiry date	Sep 6, 2005

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/4043
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An arrangement of two coupled laser diodes comprises first and second two-layer structures, each structure having a strip-shaped laser-active zone, and a middle layer. The first and second two-layer structures are symmetrically constructed relative to the middle layer at opposite sides thereof and directly across from each other so that the strip-shaped laser-active zones in each of the two-layer structures are positioned at a defined spacing directly across from each other and in symmetrical manner with respect to the middle layer. The middle layer is epitaxially deposited with a precisely dimensioned thickness relative to the two coupled laser diodes being employed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.