YIG thin film microwave apparatus
US4745380A · kind A · utility
3Cited by
2References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1986 |
| Grant date | May 17, 1988 |
| Priority date | — |
| Expiry date | Jul 9, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/218
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A YIG film microwave device utilizing the ferrimagnetic resonance of a YIG film, comprising a YIG film microwave element formed by a liquid phase epitaxial growth process and a photolithographic process, and a magnetic circuit including permanent magnets for applying a DC magnetic field to the YIG film microwave element. Some of the Fe.sup.3+ ions of the YIG film are substituted by nonmagnetic ions to provide the YIG film microwave device with satisfactory temperature characteristics. The YIG film microwave device is capable of operating stably over the wide range of working frequency and that of temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.