Integrated electronics suitable for optical communications

US4745449A · kind A · utility

Assignee

• American Telephone and Telegraph Company, AT&T Bell Laboratories · US

Inventors

• Tao-Yuasn Chang · Lincroft, US
• Richard E. Howard · Pleasanton, US

Key dates

• Filing date: Aug 7, 1987
• Grant date: May 17, 1988
• Expiry date: Aug 7, 2007

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

High gain MESFETs, integratable with a photodetector for optical communications, result from a specific gate structure. In particular, a dielectric region, such as an undoped indium aluminum arsenide region overlaid by a thin aluminum oxide region, is employed. This gate combination with, for example, an n-type indium gallium arsenide active channel yields transconductances as high as 130 mS/mm.