Integrated circuit high voltage protection
US4745450A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1986 |
| Grant date | May 17, 1988 |
| Priority date | — |
| Expiry date | Apr 1, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/08122
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Protection of the thin gate oxide of MOS field effect transistors from irreversible puncture due to undesired high voltages and currents, generated by electrostatic discharge through handling or otherwise, is provided by a two stage circuit that operates to shunt thousands or tens of volts around the protected transistors. A first stage, employing a thick field effect transistor, protects against the very high voltage. A second stage, employing a thin field effect transistor, protects against lower but still excessive voltage. The protection circuit is formed as part of an integrated circuit chip by surrounding the lead bonding pad to which the protected transistors are connected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.