Method for forming thin film of refractory material
US4746549A · kind A · utility
8Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 15, 1987 |
| Grant date | May 24, 1988 |
| Priority date | — |
| Expiry date | Jan 15, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method for forming a thin film of a refractory metal on a substrate having a silicon layer and an insulating layer on a surface thereof, a halogen compound of the refractory metal is mixed with hydrogen gas for providing a material gas, hydrogen halide gas or a halogen gas consisting of a second halogen less electronegative than the first halogen forming the halogen compound of the refractory metal is added to the material gas, and by use of the thus obtained mixed gas, vapor phase deposition refractory metal is effected selectively on the surface of the silicon layer of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.