Method of detecting the conductance state of a non-volatile memory device
US4747077A · kind A · utility
2Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1985 |
| Grant date | May 24, 1988 |
| Priority date | — |
| Expiry date | Jul 22, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/005
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Method of determining the conductance state of a non-volatile memory device switchable between high and low conductance states. The device comprises at least one p-type amorphous or microcrystalline semiconductor and an n or i-type layer. The device is irradiated with light to produce a photovoltaic response which is used to determine the conductance state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.