Patent · US Expired

Monolithically integrated WDM demultiplex module and method of manufacture of such module

US4747649A · kind A · utility

14Cited by
10References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 27, 1985
Grant dateMay 31, 1988
Priority date
Expiry dateDec 27, 2005

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F30/22
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A monolithically integrated WDM demultiplex module has a film wave guide of InGaAsP fashioned on a substrate, a photodiode of InGaAs being applied to the film wave guide. The photodiode is optically coupled to the film wave guide by a leakage coupling. A wavelength selection element in the form of a grating is provided in the surface of the film wave guide. The module can be manufactured with a single epitaxial step. Structures for increasing the crosstalk attenuation of the module and for a better coupling-in of radiation into the module are provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.