Monolithically integrated WDM demultiplex module and method of manufacture of such module
US4747649A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1985 |
| Grant date | May 31, 1988 |
| Priority date | — |
| Expiry date | Dec 27, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A monolithically integrated WDM demultiplex module has a film wave guide of InGaAsP fashioned on a substrate, a photodiode of InGaAs being applied to the film wave guide. The photodiode is optically coupled to the film wave guide by a leakage coupling. A wavelength selection element in the form of a grating is provided in the surface of the film wave guide. The module can be manufactured with a single epitaxial step. Structures for increasing the crosstalk attenuation of the module and for a better coupling-in of radiation into the module are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.