Confined ion beam sputtering device and method
US4747922A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 25, 1986 |
| Grant date | May 31, 1988 |
| Priority date | — |
| Expiry date | Mar 25, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/305
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.