Micro fabrication process for semiconductor structure using coherent electron beams
US4748132A · kind A · utility
28Cited by
9References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1986 |
| Grant date | May 31, 1988 |
| Priority date | — |
| Expiry date | Dec 15, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
As a process for fabricating uniform patterns fine enough to produce a quantum size effect, the use of electron halography is proposed. Disclosed examples employing a process are methods of manufacturing a semiconductors laser whose threshold current is approximately 1 mA, and a permeable transistor and bistable device whose response rates are 100 GHz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.