Semiconductor mushroom structure fabrication
US4749441A · kind A · utility
35Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1986 |
| Grant date | Jun 7, 1988 |
| Priority date | — |
| Expiry date | Dec 11, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating single crystal silicon in a "mushroom" shape for use in fabricating devices such as a Silicon-On-Insulator-Like MOSFET. One embodiment of the inventive method entails fabricating a hole-within-a-hole structure in a thick silicon dioxide layer disposed on a single crystal silicon substrate, growing single crystal silicon in the inner hole, etching back the silicon dioxide layer to expose a portion of the silicon in the inner hole, and growing single crystal silicon by selective epitaxial growth in the outer hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.