Process for producing hydrogenated amorphous silicon thin film and a solar cell
US4749588A · kind A · utility
10Cited by
3References
21Claims
0Family size
Inventors
Key dates
| Filing date | Feb 28, 1986 |
| Grant date | Jun 7, 1988 |
| Priority date | — |
| Expiry date | Feb 28, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The speed of forming a film of a hydrogenated amorphous silicon (a-Si:H) can be increased by controlling the amount of a supplied energy in relation to the film-forming speed. Application of this technique to the production of a solar cell enables a hydrogenated amorphous silicon solar cell (a-Si:H cell) having a high photoelectric conversion efficiency to be produced at high speeds. The aforesaid controlling procedure comprises adjusting the amount (KJ/g-Si.sub.2 H.sub.6) of an energy to be supplied to a film-forming speed depends mainly upon the flow rate of the gas and is not substantially affected by the amount of the energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.