Method of manufacturing an infrared-sensitive charge coupled device
US4749659A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 27, 1987 |
| Grant date | Jun 7, 1988 |
| Priority date | — |
| Expiry date | Feb 27, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A charge coupled device (CCD) sensitive to infrared radiation composed of a succession of three layers of Group III-V semiconductor material. The layers are a window layer, a sensitive layer and a storage layer. The layers are fixed to a supporting plate serving as input for the radiation and as a rear surface of the device. The front surface of the device supports a plurality of control electrodes and at least one output electrode. The window layer and the storage layer of the CCD are made of a binary compound AB. The sensitive layer is made of an n-ary compound (A,X,Y . . . ).sub.III (B,M,N . . . ).sub.V having a larger forbidden energy band and a smaller absorption limit wavelength than the window and storage layers. The three layers of the device are formed by epitaxial growth on a substrate. The substrate is a layer of the binary compound AB coated with an epitaxial layer of the n-ary compound. The epitaxial substrate layer is a chemical blocking layer. The substrate and the chemical blocking layer are subsequently removed chemically.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.