High speed quantum well optical detector
US4749850A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1987 |
| Grant date | Jun 7, 1988 |
| Priority date | — |
| Expiry date | Apr 27, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In response to ultrafast optical signal pulses, it is now possible to generate correspondingly ultrafast electrical signal pulses by employing semiconductor apparatus including at least one quantum well layer electrically biased by a static electric field. Optical signal pulses incident on the quantum well are at a wavelength substantially less than the absorption edge of the quantum well layer or layers. In other words, the incident optical pulses have a means photon energy less than the bandgap energy of the quantum well layer or layers. The electrical signal pulse generated subsists for a period of time substantially equal to the duration of the optical signal pulses incident on the quantum well layer or layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.