High-performance photocathode
US4749903A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1986 |
| Grant date | Jun 7, 1988 |
| Priority date | — |
| Expiry date | Nov 24, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/3423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one example of construction, a high-performance photocathode has the following structure: PA1 a transparent layer formed of P.sup.+ type semiconductor material having a forbidden band of sufficient width to ensure that this layer is transparent to the photons of the light to be detected; PA1 an absorption layer constituted by ten first sublayers formed of P.sup.+ type semiconductor material with a forbidden band of sufficiently small width to have two-dimensional electronic properties in order to achieve efficient conversion of the photons into electron-hole pairs and by ten second sublayers interposed between the first and formed of the same material as the transparent layer, the second sublayers being sufficiently thin to permit passage of electrons by tunnel effect and the thickness of the first sublayers being sufficient to permit absorption of the photons of all wavelengths of the light to be detected; PA1 a transport layer formed of the same material as the first sublayers; PA1 a layer of Cs+O for reducing the energy-gap potential so as to permit emission of electrons into vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.