Integrated matrix of nonvolatile, reprogrammable storage cells
US4750158A · kind A · utility
35Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1983 |
| Grant date | Jun 7, 1988 |
| Priority date | — |
| Expiry date | Jan 28, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/822
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In an integrated matrix of nonvolatile, reprogrammable storage cells, additional memory is provided to replace defective rows of storage cells. The addresses of the defective rows are stored in a region of the matrix. A correction register can be loaded with the addresses of the defective rows from the region of the matrix when power is first applied to the matrix or whenever the applied power deviates from the expected, nominal value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.