Method of making SOI recrystallized layers by short spatially uniform light pulses
US4751193A · kind A · utility
43Cited by
6References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 9, 1986 |
| Grant date | Jun 14, 1988 |
| Priority date | — |
| Expiry date | Oct 9, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method is provided for manufacturing large crystalline and monocrystalline semiconductor-on-insulator devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.