Method for forming patterned tin oxide thin film element
US4752501A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 1987 |
| Grant date | Jun 21, 1988 |
| Priority date | — |
| Expiry date | Jul 1, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method is disclosed for forming a semiconductor tin oxide thin film on a selected region of a surface without forming the film on an adjacent region. An ink film composed of tin(II) carboxylate compound is applied to the surface and heated to partially decompose the compound. A positive photoresist layer is preferably applied to the partially decomposed layer and selectively irradiated to define a mask overlying the selected region. Unwanted photoresist material is dissolved from the adjacent region using an aqueous alkaline solution. It is found that the solution concurrently dissolves the underlying partially decomposed tin compound, without dissolving the compound protected by the mask. Thereafter, the mask is stripped, and the underlying tin compound is heated and further decomposed to produce the desired tin oxide thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.