High-Q stress-compensated crystal device
US4754187A · kind A · utility
9Cited by
1References
8Claims
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Key dates
| Filing date | Sep 8, 1987 |
| Grant date | Jun 28, 1988 |
| Priority date | — |
| Expiry date | Sep 8, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/19
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A doubly rotated, stress and temperature compensated quartz crystal resonator. The crystal cuts are arbitrarity designated the SK1 and SK2 cuts. Lateral field excitation is used to excite only the b-mode of vibration (fast quasi-shear) and suppress the c mode (slow quasi-shear). Exclusive excitation of the b mode produces a resonator with a higher Q and lower phase noise than otherwise achievable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.