Temperature detector
US4754254A · kind A · utility
5Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1986 |
| Grant date | Jun 28, 1988 |
| Priority date | — |
| Expiry date | Sep 9, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/22
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A temperature detector having a semiconductor layer which is a p-type or n-type semiconductor doped by addition of an impurity. The semi- semiconductor is completely amorphous, or substantially amorphous with the inclusion of microcrystals. The temperature detector has good sensitivity at a temperature of not more than 100 K, and has good linearity of the change of resistivity to the change of temperature over a wide range of temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.