Semiconductor device
US4754318A · kind A · utility
17Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1986 |
| Grant date | Jun 28, 1988 |
| Priority date | — |
| Expiry date | Sep 29, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a semiconductor substrate, a first insulating layer formed on the substrate, a conductive body formed on the first insulating layer, a second insulating layer formed on the first insulating layer and the conductive body and having a contact hole formed at a contact area to reach the conductive body, and a first conductive layer formed on the second insulating layer and the conductive body. The conductive body has a conductive member formed on the first insulating layer in the contact area, and a second conductive layer formed on the first insulating layer and the conductive member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.