Method and apparatus for measuring the ion implant dosage in a semiconductor crystal
US4755049A · kind A · utility
9Cited by
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6Claims
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Key dates
| Filing date | Dec 2, 1986 |
| Grant date | Jul 5, 1988 |
| Priority date | — |
| Expiry date | Dec 2, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/8461
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A technique for measuring the ion implant dosage involves method and apparatus for directing pulses of coherent radiation from a laser to the surface of a semiconductor that has been subjected to ion implant. The intensity of the third harmonic reflected from the semiconductor is determined and correlated to determine the ion dosage within the semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.