Method of producing small conductive members on a substrate
US4755256A · kind A · utility
6Cited by
4References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 17, 1984 |
| Grant date | Jul 5, 1988 |
| Priority date | — |
| Expiry date | May 17, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12549
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method of forming alternating narrow strips of conductive metal silicide, specifically cobalt disilicide, and silicon on a substrate as of silicon with a silicon dioxide or silicon nitride surface layer. Cobalt and silicon are deposited on the substrate in the mole ratio of the eutectic composition of cobalt disilicide and silicon. A molten zone is caused to traverse these materials which upon resolidification at the trailing edge of the molten zone segregate into the two eutectic phases forming alternating narrow strata or lamellae of cobalt disilicide and silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.