Patent · US Expired

Method of manufacturing photovoltaic device

US4755475A · kind A · utility

41Cited by
3References
42Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 17, 1987
Grant dateJul 5, 1988
Priority date
Expiry dateFeb 17, 2007

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/94

Abstract

A method of manufacturing a photovoltaic device, in which a plurality of photoelectric conversion elements comprising a first electrode layer, a semiconductive layer and a second electrode layer are laminatedly arranged on an insulative surface of a substrate and said photoelectric conversion elements are electrically connected in series with each other, comprising a step of dividedly arranging the first electrode layer on the surface of the substrate, a step of coating the semiconductive layer on the surface of the substrate including the upper surface of the divided first electrode layer, a step of coating the second electrode layer on the semiconductive layer, and a step of dividing the semiconductive layer and/or the second electrode layer in order to define each element by irradiating energy-beams on the semiconductive layer and/or the second electrode layer. The formation of a low resistance layer in the semiconductive layer and a residual molten second electrode layer can be prevented by using energy-beams having an energy-distribution substantially uniform over the entire irradiated zone. In addition, short-circuits between the adjacent photoelectric conversion elements can…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.