Method and apparatus for analyzing semiconductor devices using charge-sensitive electron-beam-injected-carrier microscopy
US4755748A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 5, 1985 |
| Grant date | Jul 5, 1988 |
| Priority date | — |
| Expiry date | Jun 5, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/305
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In order to determine whether defects are present in a semiconductor device (103) biased to its normal operating levels, a scanning electron microscope (101) equipped with an electron beam blanker (102) scans the device with a pulsed electron beam. Charge carriers generated within the device in response to each pulse of electrons are collected and amplified by a charge carrier sensitive preamplifier (114) to produce a voltage signal which when applied to a CRT (118) produces an image of the semiconductor. Defects in the device can be located from irregularities in the image and the presence of bias dependent defects can be ascertained by varying the bias current supplied (113) to the device and noting changes in the image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.