Znse green light emitting diode
US4755856A · kind A · utility
3Cited by
3References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 5, 1983 |
| Grant date | Jul 5, 1988 |
| Priority date | — |
| Expiry date | Jul 5, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/971
Abstract
A green color light emitting ZnSe diode having a pn junction is fabricated by the use of a ZnSe crystal having a good crystal perfection and being obtained by a solution growth method relying on the temperature difference technique using a solvent containing at least Te and Se and using atoms of at least one kind of impurity selected from Group Ib elements of the Periodic Table as a principal impurity for producing a p type region in the crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.