Magnetoresistive sensor with improved antiferromagnetic film
US4755897A · kind A · utility
34Cited by
4References
4Claims
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Key dates
| Filing date | Apr 28, 1987 |
| Grant date | Jul 5, 1988 |
| Priority date | — |
| Expiry date | Apr 28, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/399
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An improved thin film magnetoresistive (MR) sensor uses an alloy comprising Fe, Mn and Cr as an antiferromagnetic layer to provide a longitudinal exchange bias in the ferromagnetic MR layer. Sufficient exchange biasing is provided and the FeMnCr layer exhibits excellent corrosion resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.