Method and apparatus for refractory metal deposition
US4756927A · kind A · utility
16Cited by
10References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 1986 |
| Grant date | Jul 12, 1988 |
| Priority date | — |
| Expiry date | May 29, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser induced direct writing pyrolysis of a refractory metal or metal silicide on substrates is described. Typical reactants comprise flowing WF.sub.6, MoF.sub.6 or TiCl.sub.4 with SiH.sub.4 and an inert gas, such as Argon. A preferable substrate surface is a polyimide film. The refractory metal film may comprise low resistivity W, M, or Ti, or silicides thereof, having a predetermined resistance depending on the relative ratio of reactants. The invention is useful, inter alia, for repair of defective circuit interconnects, and formation of interconnects or resistors on substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.