Method of making gate turn off switch with anode short and buried base
US4757025A · kind A · utility
7Cited by
14References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 28, 1986 |
| Grant date | Jul 12, 1988 |
| Priority date | — |
| Expiry date | Nov 28, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/206
Abstract
A GTO switch is provided in which the upper base layer (gate) is formed by a diffusion step. An epitaxial layer grown over the upper base layer contains cathode and gate diffusions which are separated by an undiffused gap. This "buried base" technique provides precise control over the resistivity of the base. The cathode-gate gap provides increased reverse gate voltage capacity. Other features include a large anode short area and a double-layer-metal; contact structure on the cathode-gate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.