Group III-V semiconductor electrical contact
US4757369A · kind A · utility
7Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1987 |
| Grant date | Jul 12, 1988 |
| Priority date | — |
| Expiry date | Jun 10, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.