Method and means for optical detection of charge density modulation in a semiconductor
US4758092A · kind A · utility
112Cited by
6References
7Claims
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Key dates
| Filing date | Mar 4, 1986 |
| Grant date | Jul 19, 1988 |
| Priority date | — |
| Expiry date | Mar 4, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/308
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is a technique for probing dynamic sheet charge density variations in integrated semiconductor devices. Using a specially designed non-invasive Nomarski phase contrast interferometer a sheet charge density sensitivity of 2.6.times.10.sup.8 e/cm.sup.2 / .sqroot.Hz is extracted from experimental data for 1 mA of detected photocurrent. The charge density sensitivity makes possible .mu.V signal level detection in an active device, and with digital signals the corresponding signal/noise level is sufficiently high that multi-mega-baud data can be captured in real time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.