Process for the production of polycrystalline silicon coatings by electrolytic deposition of silicon
US4759830A · kind A · utility
1Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1987 |
| Grant date | Jul 26, 1988 |
| Priority date | — |
| Expiry date | Aug 18, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S205/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A novel process for the electrolytic deposition of silicon from a melt containing covalent silicon compounds, in particular silicon tetrahalides, and furthermore aluminum halides, alkali metal halides and halides of transition metals is carried out at relatively low temperatures of 100.degree. to 350.degree. C. in an inert temperature. The silicon is deposited cathodically or anodically onto electrically conductive material. The silicon coatings are homogeneous and adhere firmly to the substrate. The coated materials can be used for the production of photoconductive or photovoltaic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.