Method for forming deposition film using Si compound and active species from carbon and halogen compound
US4759947A · kind A · utility
98Cited by
43References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1985 |
| Grant date | Jul 26, 1988 |
| Priority date | — |
| Expiry date | Oct 7, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/24
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a deposition film comprises introducing, into a film forming chamber for forming a deposition film on a substrate, a silicon compound as a material for film formation and an active species generated from a compound containing carbon and halogen and capable of chemical interaction with said silicon compound, and applying thereto at least an energy selected from optical, thermal and discharge energies to excite said silicon compound and to cause a reaction thereof, thus forming a deposition film on said substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.