Thyristor emitter short configuration

US4760438A · kind A · utility

Assignee

• Semikron Gesellschaft fur Gleichrichterbau und Elektronik m.b.H.

Inventor

• Werner Tursky · Schwabach, DE

Key dates

• Filing date: May 28, 1987
• Grant date: Jul 26, 1988
• Expiry date: May 28, 2007

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/148

Abstract

A thyristor comprising a semiconductor body having at least four sequential layers of alternatingly opposite conductivity types. One of the layers is an emitter zone and the contiguous layer of opposite conductivity type is a base zone. A control electrode is electrically connected to the base zone and surrounded by the emitter zone. A first penetration region, including at least first and second groups of apertures in the emitter zone arranged in corresponding concentric circles of different diameters about the control electrode, permits electrical contact between the base and emitter zones. The number of apertures in each of the first and second groups is the same, and the region of the emitter zone in which the first penetration region is located is of smaller expanse than the remainder of the emitter zone. A second penetration region surrounding the first penetration region includes a plurality of apertures in the emitter zone which are arranged in a polygonal pattern to permit electrical contact between the base and emitter zones. This polygonal pattern of apertures includes transitional polygons having a portion thereof located inside of or abutting the concentric circle of t…