Nonvolatile semiconductor memory device
US4760556A · kind A · utility
10Cited by
0References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1986 |
| Grant date | Jul 26, 1988 |
| Priority date | — |
| Expiry date | Sep 25, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Each of the memory cells forming a nonvolatile RAM comprises one floating-gate transistor and one capacitor. When the power source is turned on, storage of information is performed according to the amount of electric charge stored in each capacitor. When the power source is turned off, nonvolatile storage of information is performed according to the level of the threshold voltage of each floating-gate transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.