Aluminum nitride substrate
US4761345A · kind A · utility
22Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1987 |
| Grant date | Aug 2, 1988 |
| Priority date | — |
| Expiry date | Feb 20, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12576
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
There is disclosed an aluminum nitride substrate which comprises a substrate composed of an aluminum nitride sintered product; an electroconductive metallized layer composed of titanium nitride and at least one selected from the group consisting of molybdenum, tungsten, tantalum, an element in group III of the periodic table, an element in group IVa of the same, a rare earth element, an actinide element and a compound containing these elements; and an electroconductive protective layer laminated in this order on the aluminum nitride sintered product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.