Means for forming a melt of a semiconductor material in order to make a crystalline element grow therein
US4762687A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 23, 1986 |
| Grant date | Aug 9, 1988 |
| Priority date | — |
| Expiry date | Dec 23, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The inventive means includes a supply vessel (10) having a bottom opening (14), feed means (15 to 17) for supplying the vessel (10) with solid silicon and means (11 to 13) for heating the vessel, said vessel being placed above the crucible (1) containing the melt (8) so that the molten silicon in the vessel (10) flows out through the bottom opening (14) into the crucible (1) when the level (h) of the molten silicon in the supply vessel reaches a maximum value (20) and the replenishing flow stops when the level (h) has fallen to a minimum value (22). An application involving the deposition of a layer of polycrystalline silicon onto a carbon tape is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.