Method for producing via holes in polymer dielectrics
US4764485A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1987 |
| Grant date | Aug 16, 1988 |
| Priority date | — |
| Expiry date | Jan 5, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for producing a hole in a polymer film includes the steps of depositing a conductive layer onto the polymer film and irradiating a spot on the layer with a burst of focused laser energy at a level sufficient to form an opening in the film and, subsequently, plasma etching the film so as to form a hole of desired depth in the polymer film underlying the opening in the conductive layer. This method is particularly applicable to the formation of multichip intergrated circuit packages in which a plurality of chips formed in a semiconductor wafer are coated with a polymer film covering the chips and the substrates. The holes are provided for the purpose of interconnecting selected chip contact pads via a deposited conductive layer which overlies the film and fills the holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.