Heat-resistant thin film photoelectric converter
US4765845A · kind A · utility
53Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1986 |
| Grant date | Aug 23, 1988 |
| Priority date | — |
| Expiry date | Dec 17, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A heat-resistant thin film photoelectric converter, comprising a semiconductor layer, a front transparent electrode, a rear metal electrode, and a diffusion-blocking layer, said diffusion-blocking layer being provided between the semiconductor layer and the rear metal electrode and being a layer of metal silicide having a thickness of 5 .ANG. to 200 .ANG.. The converter of the present invention can avoid the reduction in the efficiency due to the diffusion of metal or metallic compound from the electrode into the semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.