Process for the production of an electric contact on a HgCdTe substrate with a P conductivity and application to the production of an N/P diode
US4766084A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1987 |
| Grant date | Aug 23, 1988 |
| Priority date | — |
| Expiry date | Sep 16, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1237
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process for producing an electric contact on a HgCdTe substrate having a P conductivity and application to the production of an N/P diode. For producing an N/P diode, an insulating layer deposited on the HgCdTe substrate is etched by ion bombardment through a first mask, so as to produce a first opening in said insulating layer. The mask is removed and the substrate covered by the insulating layer undergoes a heat treatment, so as to at least mitigate the P conductivity drop induced by the ion bombardment in a first portion of the substrate facing the first opening. This is followed by ion implantation in a second portion of the substrate through a second mask in order to produce an N conductivity portion. This second mask is removed and the insulating layer is etched through a third mask by ion bombardment in order to produce a second opening facing the second portion. After removing the third mask, conductive pads are produced in the first and second openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.