Monolithic semiconductor structure of a laser and a field effect transistor
US4766472A · kind A · utility
Inventors
Key dates
| Filing date | Jan 5, 1987 |
| Grant date | Aug 23, 1988 |
| Priority date | — |
| Expiry date | Jan 5, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0208
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A monolithic semiconductor structure of a laser and a field effect transistor applicable to telecommunications comprises, on a semiinsulating substrate, a semiconductor layer of Ga.sub.1-x Al.sub.x As, a N-doped semiconductor layer of Ga.sub.1-y Al.sub.y As, a semiconductor layer of Ga.sub.1-z Al.sub.z As, in which x and z vary from 0.2 to 0.7 and y from 0 to 0.15 and a GaAs semiconductor layer. In these four layers are formed one type P region and two type N regions, the type P region and one of the type N regions defining between them the active zone of the laser and the two type N regions defining between them the active zone of the transistor, respectively forming the transistor source and drain. The P region of the laser is equipped with an electrode and the transistor source and drain with ohmic contacts. A process for making the structure as also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.