Patent · US Expired

Power semiconductor module

US4766481A · kind A · utility

31Cited by
6References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 31, 1986
Grant dateAug 23, 1988
Priority date
Expiry dateOct 31, 2006

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/30111
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A power semiconductor module includes a multi-layered substrate formed of a first ceramic bottom plate, at least one second ceramic plate disposed above and parallel to the first ceramic bottom plate, a metal foil in the form of a textured metallization located between and directly bonded to the ceramic plates, the second ceramic plate having cutouts formed therein, and assembly elements soldered in the cutouts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.