Power semiconductor module
US4766481A · kind A · utility
31Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1986 |
| Grant date | Aug 23, 1988 |
| Priority date | — |
| Expiry date | Oct 31, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module includes a multi-layered substrate formed of a first ceramic bottom plate, at least one second ceramic plate disposed above and parallel to the first ceramic bottom plate, a metal foil in the form of a textured metallization located between and directly bonded to the ceramic plates, the second ceramic plate having cutouts formed therein, and assembly elements soldered in the cutouts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.