Semiconductor memory having a bypassable data output latch
US4766572A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 26, 1985 |
| Grant date | Aug 23, 1988 |
| Priority date | — |
| Expiry date | Dec 26, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory is disclosed which attains a data read operation at a high speed with a low power dissipation. The memory includes a sense amplifier amplifying a data signal stored in the selected memory cell, a data latch circuit latching the output signal of the sense amplifier, a switching circuit outputting the output signal of the sense amplifier before the data latch circuit latches the output signal of the sense amplifier and outputting the output signal of the data latch circuit after the data latch circuit latches the output signal of the sense amplifier, and an output circuit producing an output data signal responsive to the output signal of the switching circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.