High dielectric constant ceramic material and method of manufacturing the same
US4767732A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1987 |
| Grant date | Aug 30, 1988 |
| Priority date | — |
| Expiry date | Aug 28, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/1254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
To obtain a ceramic material having a high dielectric constant (K=2300 to 7000), a high insulation resistance (CR=4000 to 18000 ohmF), a low temperature dependence (.+-.10%) to (.+-.22, -33%) upon dielectric constant over a wide temperature range (-55 and +125.degree. C.) and a relatively low sintering temperature (1000.degree. C. to 1250.degree. C.), BaTiO.sub.3 powder at least 50 wt % of which is 0.7 to 3 .mu.m in particle size) is mixed with another compound with perovskite structure mainly composed of oxides of Pb, Ba, Sr, Zn, Nb, Mg and Ti before sintering. Further, part of Ti of BaTiO.sub.3 is substitutable with Zr or Sn, and part of Ba of BaTiO.sub.3 is substitutable with Sr, Ca or Ce.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.