Electron beam metrology system
US4767926A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1986 |
| Grant date | Aug 30, 1988 |
| Priority date | — |
| Expiry date | Sep 26, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B15/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is an electron beam metrology system for measuring the width of a pattern on a specimen by scanning the specimen with a deflected electron beam, detecting a pattern image signal provided by secondary electrons emitted from the specimen, and measuring the pattern width on the specimen on the basis of the pattern detection signal. The system comprises a signal detecting device including at least one set of two detectors disposed toward the scanning direction of the electron beam in a relation symmetrical with respect to the optical axis of the electron beam for detecting pattern image signals independently of each other, a device for recognizing surface topography of the pattern using an output signal of the signal detecting device, and a device for measuring the pattern width while discriminating as to whether the pattern is a raised-profile pattern or a hollow-profile pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.